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DRDO develops Silicon Carbide Wafers, GaN HEMT
Updated : 1 year, 4 months ago IST
Solid State Physics Laboratory, a DRDO laboratory, has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide (SiC) wafers and fabricating Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) upto 150W and Monolithic Microwave In
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