New Delhi [India], December 30 (ANI): Indian researchers have developed a high-performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF) circ
Osaka [Japan], Feb 23 (ANI): Consumer electronics leader Panasonic on Friday announced that they have developed an insulated-gate gallium nitride (GaN) power transistor, capable of continuous stable operation with no variation in its threshold voltage.