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Scientists develop high-performance transistor models for space, defense a
Updated : 4 years, 2 months ago IST
New Delhi [India], December 30 (ANI): Indian researchers have developed a high-performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs) with simple design procedures which can be used to make high-power Radio Frequency (RF) circ
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